WM05P02M WAYON


WM05P02M.pdf
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -200mA; Idm: -0.8A; 380mW
Case: SOT23
Power dissipation: 0.38W
Gate charge: 1.5nC
Polarisation: unipolar
Version: ESD
Drain current: -200mA
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance:
Mounting: SMD
Pulsed drain current: -0.8A
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Технічний опис WM05P02M WAYON

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -50V; -200mA; Idm: -0.8A; 380mW, Case: SOT23, Power dissipation: 0.38W, Gate charge: 1.5nC, Polarisation: unipolar, Version: ESD, Drain current: -200mA, Kind of channel: enhancement, Drain-source voltage: -50V, Type of transistor: P-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, On-state resistance: 3Ω, Mounting: SMD, Pulsed drain current: -0.8A.