
WM06N03LE WAYON

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2900 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна |
---|---|
17+ | 25.58 грн |
37+ | 10.42 грн |
81+ | 4.75 грн |
193+ | 1.99 грн |
500+ | 1.79 грн |
635+ | 1.40 грн |
1745+ | 1.33 грн |
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Технічний опис WM06N03LE WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 0.34A, Pulsed drain current: 1.36A, Power dissipation: 0.3W, Case: SOT523, Gate-source voltage: ±20V, On-state resistance: 2Ω, Mounting: SMD, Gate charge: 1.06nC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.