WM06N30MS WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2397 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 18+ | 24.60 грн |
| 52+ | 7.64 грн |
| 123+ | 3.21 грн |
| 136+ | 2.90 грн |
| 407+ | 2.27 грн |
| 1117+ | 2.15 грн |
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Технічний опис WM06N30MS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1.5W; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 3A, Pulsed drain current: 12A, Power dissipation: 1.5W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 83mΩ, Mounting: SMD, Gate charge: 11.3nC, Kind of package: reel; tape, Kind of channel: enhancement.