WM10N20M WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2979 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 17+ | 25.76 грн |
| 48+ | 8.37 грн |
| 111+ | 3.60 грн |
| 159+ | 2.52 грн |
| 497+ | 1.88 грн |
| 1366+ | 1.78 грн |
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Технічний опис WM10N20M WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 2A, Pulsed drain current: 8A, Power dissipation: 1.2W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 0.28Ω, Mounting: SMD, Gate charge: 5.3nC, Kind of package: reel; tape, Kind of channel: enhancement.