WM10N20M WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.2W
Case: SOT23
Mounting: SMD
Pulsed drain current: 8A
Gate charge: 5.3nC
Drain current: 2A
Kind of channel: enhancement
Drain-source voltage: 100V
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 0.28Ω
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.68 грн |
| 46+ | 9.04 грн |
| 107+ | 3.88 грн |
| 154+ | 2.69 грн |
| 500+ | 2.43 грн |
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Технічний опис WM10N20M WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Power dissipation: 1.2W, Case: SOT23, Mounting: SMD, Pulsed drain current: 8A, Gate charge: 5.3nC, Drain current: 2A, Kind of channel: enhancement, Drain-source voltage: 100V, Gate-source voltage: ±20V, Kind of package: reel; tape, On-state resistance: 0.28Ω.