WM10P20M2 WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -8A; 2.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 2.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -8A; 2.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 2.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2998 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 36.06 грн |
| 33+ | 12.36 грн |
| 46+ | 8.69 грн |
| 100+ | 7.73 грн |
| 144+ | 6.54 грн |
| 396+ | 6.22 грн |
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Технічний опис WM10P20M2 WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -8A; 2.2W; SOT23, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -100V, Drain current: -2A, Pulsed drain current: -8A, Power dissipation: 2.2W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 0.31Ω, Mounting: SMD, Gate charge: 15nC, Kind of package: reel; tape, Kind of channel: enhancement.