WM12N35M2 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 3.5A; Idm: 14A; 2.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 3.5A; Idm: 14A; 2.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 34.62 грн |
| 35+ | 11.21 грн |
| 58+ | 6.81 грн |
| 100+ | 6.05 грн |
| 180+ | 5.14 грн |
| 494+ | 4.86 грн |
| 3000+ | 4.81 грн |
Відгуки про товар
Написати відгук
Технічний опис WM12N35M2 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 120V; 3.5A; Idm: 14A; 2.5W; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 120V, Drain current: 3.5A, Pulsed drain current: 14A, Power dissipation: 2.5W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 0.17Ω, Mounting: SMD, Gate charge: 14nC, Kind of package: reel; tape, Kind of channel: enhancement.