WMB014N04LG4 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 165A; Idm: 660A; 62.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 165A
Pulsed drain current: 660A
Power dissipation: 62.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 165A; Idm: 660A; 62.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 165A
Pulsed drain current: 660A
Power dissipation: 62.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 69 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 63.49 грн |
| 10+ | 48.66 грн |
| 24+ | 39.70 грн |
| 64+ | 37.57 грн |
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Технічний опис WMB014N04LG4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 165A; Idm: 660A; 62.5W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 165A, Pulsed drain current: 660A, Power dissipation: 62.5W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 1.4mΩ, Mounting: SMD, Gate charge: 116nC, Kind of package: reel; tape, Kind of channel: enhancement.