WMB025N06LG4 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Case: PDFN5060-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 140A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 92.6W
Polarisation: unipolar
Gate charge: 73.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 560A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Case: PDFN5060-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 140A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 92.6W
Polarisation: unipolar
Gate charge: 73.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 560A
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 61.81 грн |
| 10+ | 54.37 грн |
| 21+ | 46.24 грн |
| 56+ | 43.69 грн |
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Технічний опис WMB025N06LG4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W, Case: PDFN5060-8, Mounting: SMD, Kind of package: reel; tape, Drain-source voltage: 60V, Drain current: 140A, On-state resistance: 2.6mΩ, Type of transistor: N-MOSFET, Power dissipation: 92.6W, Polarisation: unipolar, Gate charge: 73.5nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 560A.