WMB02DN10T1 WAYON
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 3.5A; Idm: 14A; 6.94W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 6.94W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 3.5A; Idm: 14A; 6.94W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 6.94W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 42.09 грн |
| 21+ | 18.62 грн |
| 25+ | 15.56 грн |
| 75+ | 11.95 грн |
| 206+ | 11.27 грн |
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Технічний опис WMB02DN10T1 WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 100V; 3.5A; Idm: 14A; 6.94W, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 3.5A, Pulsed drain current: 14A, Power dissipation: 6.94W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 0.29Ω, Mounting: SMD, Gate charge: 5.3nC, Kind of package: reel; tape, Kind of channel: enhancement.