WMB034N06HG4 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 72.5nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 72.5nC
Kind of channel: enhancement
на замовлення 98 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 61.07 грн |
| 10+ | 49.20 грн |
| 23+ | 40.16 грн |
| 62+ | 38.01 грн |
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Технічний опис WMB034N06HG4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 79A, Pulsed drain current: 500A, Power dissipation: 89.2W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 3.2mΩ, Mounting: SMD, Gate charge: 72.5nC, Kind of channel: enhancement.