WMB040N08HGS WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 130A; Idm: 520A; 122.5W
Mounting: SMD
Case: PDFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 78.5nC
On-state resistance: 4mΩ
Power dissipation: 122.5W
Gate-source voltage: ±20V
Drain current: 130A
Drain-source voltage: 80V
Pulsed drain current: 520A
Kind of package: reel; tape
| Кількість | Ціна |
|---|---|
| 6+ | 82.03 грн |
| 10+ | 71.15 грн |
| 25+ | 63.62 грн |
Відгуки про товар
Написати відгук
Технічний опис WMB040N08HGS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 80V; 130A; Idm: 520A; 122.5W, Mounting: SMD, Case: PDFN5060-8, Kind of channel: enhancement, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 78.5nC, On-state resistance: 4mΩ, Power dissipation: 122.5W, Gate-source voltage: ±20V, Drain current: 130A, Drain-source voltage: 80V, Pulsed drain current: 520A, Kind of package: reel; tape.