WMB043N10LGS WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W
Case: PDFN5060-8
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 4.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 131.6W
Polarisation: unipolar
Gate charge: 111.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 480A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W
Case: PDFN5060-8
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 4.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 131.6W
Polarisation: unipolar
Gate charge: 111.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 480A
Mounting: SMD
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 66.85 грн |
| 10+ | 58.24 грн |
| 20+ | 47.21 грн |
| 53+ | 44.68 грн |
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Технічний опис WMB043N10LGS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W, Case: PDFN5060-8, Kind of package: reel; tape, Drain-source voltage: 100V, Drain current: 120A, On-state resistance: 4.5mΩ, Type of transistor: N-MOSFET, Power dissipation: 131.6W, Polarisation: unipolar, Gate charge: 111.2nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 480A, Mounting: SMD.