WMB053NV8HGS WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 85V; 100A; Idm: 400A; 107.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 85V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 107.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 76.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 85V; 100A; Idm: 400A; 107.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 85V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 107.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 76.2nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис WMB053NV8HGS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 85V; 100A; Idm: 400A; 107.8W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 85V, Drain current: 100A, Pulsed drain current: 400A, Power dissipation: 107.8W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 5.5mΩ, Mounting: SMD, Gate charge: 76.2nC, Kind of package: reel; tape, Kind of channel: enhancement.