WMB060N08LG2 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 98A; Idm: 310A; 96W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 98A
Pulsed drain current: 310A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 98A; Idm: 310A; 96W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 98A
Pulsed drain current: 310A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 87 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 64.33 грн |
| 10+ | 46.06 грн |
| 25+ | 43.70 грн |
| 26+ | 35.92 грн |
| 71+ | 33.96 грн |
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Технічний опис WMB060N08LG2 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 80V; 98A; Idm: 310A; 96W; PDFN5060-8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 80V, Drain current: 98A, Pulsed drain current: 310A, Power dissipation: 96W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 6mΩ, Mounting: SMD, Gate charge: 45nC, Kind of package: reel; tape, Kind of channel: enhancement.