WMB060N10LGS WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 380A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 380A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 380A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 380A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 65.20 грн |
| 10+ | 51.80 грн |
| 23+ | 40.39 грн |
| 61+ | 38.16 грн |
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Технічний опис WMB060N10LGS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 380A; 113.6W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 95A, Pulsed drain current: 380A, Power dissipation: 113.6W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 5.5mΩ, Mounting: SMD, Gate charge: 75nC, Kind of package: reel; tape, Kind of channel: enhancement.