WMB072N12HG2 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 90A; Idm: 360A; 104W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 104W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 90A; Idm: 360A; 104W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 104W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 55 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 83.60 грн |
| 10+ | 73.71 грн |
| 15+ | 61.95 грн |
| 42+ | 58.81 грн |
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Технічний опис WMB072N12HG2 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 120V; 90A; Idm: 360A; 104W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 120V, Drain current: 90A, Pulsed drain current: 360A, Power dissipation: 104W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 7.5mΩ, Mounting: SMD, Gate charge: 43nC, Kind of package: reel; tape, Kind of channel: enhancement.