WMB072N12LG2-S WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 90A; Idm: 360A; 118W
Mounting: SMD
Drain-source voltage: 120V
Drain current: 90A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 118W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 52.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 360A
Case: PDFN5060-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 90A; Idm: 360A; 118W
Mounting: SMD
Drain-source voltage: 120V
Drain current: 90A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 118W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 52.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 360A
Case: PDFN5060-8
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 70.09 грн |
| 10+ | 61.16 грн |
| 18+ | 51.60 грн |
| 50+ | 48.77 грн |
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Технічний опис WMB072N12LG2-S WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 120V; 90A; Idm: 360A; 118W, Mounting: SMD, Drain-source voltage: 120V, Drain current: 90A, On-state resistance: 7mΩ, Type of transistor: N-MOSFET, Power dissipation: 118W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 52.5nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 360A, Case: PDFN5060-8.