WMB080N03LG2 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; Idm: 168A; 30.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25.5A
Pulsed drain current: 168A
Power dissipation: 30.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; Idm: 168A; 30.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25.5A
Pulsed drain current: 168A
Power dissipation: 30.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 35.63 грн |
| 26+ | 15.60 грн |
| 31+ | 13.07 грн |
| 96+ | 9.69 грн |
| 262+ | 9.22 грн |
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Технічний опис WMB080N03LG2 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; Idm: 168A; 30.4W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 25.5A, Pulsed drain current: 168A, Power dissipation: 30.4W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 12mΩ, Mounting: SMD, Gate charge: 7nC, Kind of package: reel; tape, Kind of channel: enhancement.