WMB080N10LG2 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46.8A; Idm: 296A; 84W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46.8A
Pulsed drain current: 296A
Power dissipation: 84W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 30.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46.8A; Idm: 296A; 84W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46.8A
Pulsed drain current: 296A
Power dissipation: 84W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 30.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 51.17 грн |
| 12+ | 32.03 грн |
| 25+ | 28.81 грн |
| 39+ | 23.22 грн |
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Технічний опис WMB080N10LG2 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 46.8A; Idm: 296A; 84W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 46.8A, Pulsed drain current: 296A, Power dissipation: 84W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 11mΩ, Mounting: SMD, Gate charge: 30.8nC, Kind of package: reel; tape, Kind of channel: enhancement.