WMB090DNV6LG4 WAYON
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 40A; Idm: 160A; 27.8W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 27.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 40A; Idm: 160A; 27.8W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 27.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 99 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 66.16 грн |
| 11+ | 39.15 грн |
| 25+ | 35.13 грн |
| 34+ | 27.65 грн |
| 92+ | 26.15 грн |
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Технічний опис WMB090DNV6LG4 WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 65V; 40A; Idm: 160A; 27.8W, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 65V, Drain current: 40A, Pulsed drain current: 160A, Power dissipation: 27.8W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 10.5mΩ, Mounting: SMD, Gate charge: 22.1nC, Kind of package: reel; tape, Kind of channel: enhancement.