WMB090NV6LG4 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 45A; Idm: 180A; 31.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 31.25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of package: reel; tape
Kind of channel: enhancement
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.72 грн |
| 22+ | 19.73 грн |
| 25+ | 17.83 грн |
| 100+ | 15.67 грн |
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Технічний опис WMB090NV6LG4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 65V; 45A; Idm: 180A; 31.25W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 65V, Drain current: 45A, Pulsed drain current: 180A, Power dissipation: 31.25W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 9mΩ, Mounting: SMD, Gate charge: 21.7nC, Kind of package: reel; tape, Kind of channel: enhancement.