WMB093N15HG4 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 95A; Idm: 380A; 178.5W
Case: PDFN5060-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 37.2nC
On-state resistance: 9.3mΩ
Drain current: 95A
Pulsed drain current: 380A
Gate-source voltage: ±20V
Power dissipation: 178.5W
Drain-source voltage: 150V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 95A; Idm: 380A; 178.5W
Case: PDFN5060-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 37.2nC
On-state resistance: 9.3mΩ
Drain current: 95A
Pulsed drain current: 380A
Gate-source voltage: ±20V
Power dissipation: 178.5W
Drain-source voltage: 150V
Kind of channel: enhancement
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Технічний опис WMB093N15HG4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 150V; 95A; Idm: 380A; 178.5W, Case: PDFN5060-8, Mounting: SMD, Kind of package: reel; tape, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 37.2nC, On-state resistance: 9.3mΩ, Drain current: 95A, Pulsed drain current: 380A, Gate-source voltage: ±20V, Power dissipation: 178.5W, Drain-source voltage: 150V, Kind of channel: enhancement.