WMB100N07TS WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 125W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 125W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
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Технічний опис WMB100N07TS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 125W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 70V, Drain current: 100A, Pulsed drain current: 400A, Power dissipation: 125W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 7.4mΩ, Mounting: SMD, Gate charge: 92nC, Kind of package: reel; tape, Kind of channel: enhancement.