WMB100P03TS WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Pulsed drain current: -400A
Power dissipation: 73.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 134nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Pulsed drain current: -400A
Power dissipation: 73.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 134nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 60.25 грн |
| 12+ | 33.41 грн |
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Технічний опис WMB100P03TS WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -100A, Pulsed drain current: -400A, Power dissipation: 73.5W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 3.9mΩ, Mounting: SMD, Gate charge: 134nC, Kind of package: reel; tape, Kind of channel: enhancement.