WMB108N03T1 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 108A; Idm: 432A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 108A
Pulsed drain current: 432A
Power dissipation: 69W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 108A; Idm: 432A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 108A
Pulsed drain current: 432A
Power dissipation: 69W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 400 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 33.86 грн |
| 21+ | 18.87 грн |
| 25+ | 16.98 грн |
| 67+ | 13.83 грн |
| 183+ | 13.13 грн |
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Технічний опис WMB108N03T1 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 108A; Idm: 432A; 69W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 108A, Pulsed drain current: 432A, Power dissipation: 69W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 3.7mΩ, Mounting: SMD, Gate charge: 32nC, Kind of package: reel; tape, Kind of channel: enhancement.