WMB120P06TS WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 168.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -120A
Pulsed drain current: -480A
Power dissipation: 168.9W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 168.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -120A
Pulsed drain current: -480A
Power dissipation: 168.9W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 84 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 70.15 грн |
| 10+ | 62.07 грн |
| 19+ | 48.28 грн |
| 51+ | 45.98 грн |
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Технічний опис WMB120P06TS WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 168.9W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -60V, Drain current: -120A, Pulsed drain current: -480A, Power dissipation: 168.9W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 7mΩ, Mounting: SMD, Gate charge: 84nC, Kind of package: reel; tape, Kind of channel: enhancement.