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WMB120P06TS

WMB120P06TS WAYON


Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 168.9W
Mounting: SMD
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN5060-8
On-state resistance: 7mΩ
Pulsed drain current: -480A
Power dissipation: 168.9W
Gate charge: 84nC
Polarisation: unipolar
Drain current: -120A
Kind of channel: enhancement
Drain-source voltage: -60V
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Технічний опис WMB120P06TS WAYON

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 168.9W, Mounting: SMD, Type of transistor: P-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: PDFN5060-8, On-state resistance: 7mΩ, Pulsed drain current: -480A, Power dissipation: 168.9W, Gate charge: 84nC, Polarisation: unipolar, Drain current: -120A, Kind of channel: enhancement, Drain-source voltage: -60V.