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WMB13N65EM WAYON

Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 11A; 31W
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: PDFN5060-8
On-state resistance: 0.4Ω
Power dissipation: 31W
Polarisation: unipolar
Technology: WMOS™ EM
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 650V

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Технічний опис WMB13N65EM WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 11A; 31W, Mounting: SMD, Type of transistor: N-MOSFET, Gate-source voltage: ±30V, Kind of package: reel; tape, Case: PDFN5060-8, On-state resistance: 0.4Ω, Power dissipation: 31W, Polarisation: unipolar, Technology: WMOS™ EM, Drain current: 11A, Kind of channel: enhancement, Drain-source voltage: 650V.