WMB175DN10LG4 WAYON
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 39A; Idm: 156A; 59.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Pulsed drain current: 156A
Power dissipation: 59.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 39A; Idm: 156A; 59.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Pulsed drain current: 156A
Power dissipation: 59.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 67.01 грн |
| 10+ | 51.20 грн |
| 23+ | 40.25 грн |
| 64+ | 38.04 грн |
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Технічний опис WMB175DN10LG4 WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 100V; 39A; Idm: 156A; 59.5W, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 39A, Pulsed drain current: 156A, Power dissipation: 59.5W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 19.5mΩ, Mounting: SMD, Gate charge: 22.5nC, Kind of package: reel; tape, Kind of channel: enhancement.