WMB175N10LG4 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 71.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 184A
Gate charge: 22.7nC
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 42.75 грн |
| 18+ | 23.73 грн |
| 25+ | 21.45 грн |
| 100+ | 18.84 грн |
| 500+ | 17.48 грн |
| 3000+ | 16.55 грн |
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Технічний опис WMB175N10LG4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 71.4W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 46A, Power dissipation: 71.4W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 17mΩ, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Pulsed drain current: 184A, Gate charge: 22.7nC.


