WMB175N10LG4 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 71.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 22.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 71.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 22.7nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 39.79 грн |
| 18+ | 21.85 грн |
| 25+ | 19.65 грн |
| 54+ | 17.45 грн |
| 147+ | 16.51 грн |
| 500+ | 16.11 грн |
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Технічний опис WMB175N10LG4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 71.4W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 46A, Pulsed drain current: 184A, Power dissipation: 71.4W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 17mΩ, Mounting: SMD, Gate charge: 22.7nC, Kind of package: reel; tape, Kind of channel: enhancement.