
WMB26DN06TS WAYON
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 26A; Idm: 104A; 39W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Pulsed drain current: 104A
Power dissipation: 39W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 26A; Idm: 104A; 39W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Pulsed drain current: 104A
Power dissipation: 39W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна |
---|---|
12+ | 37.66 грн |
19+ | 20.90 грн |
25+ | 18.80 грн |
60+ | 15.31 грн |
163+ | 14.53 грн |
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Технічний опис WMB26DN06TS WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 60V; 26A; Idm: 104A; 39W, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 26A, Pulsed drain current: 104A, Power dissipation: 39W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 32mΩ, Mounting: SMD, Gate charge: 22nC, Kind of package: reel; tape, Kind of channel: enhancement.