WMB26N06TS WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; Idm: 104A; 43.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Pulsed drain current: 104A
Power dissipation: 43.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; Idm: 104A; 43.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Pulsed drain current: 104A
Power dissipation: 43.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 33.78 грн |
| 30+ | 13.41 грн |
| 36+ | 11.14 грн |
| 100+ | 10.59 грн |
| 106+ | 8.70 грн |
| 289+ | 8.23 грн |
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Технічний опис WMB26N06TS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 26A; Idm: 104A; 43.8W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 26A, Pulsed drain current: 104A, Power dissipation: 43.8W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 32mΩ, Mounting: SMD, Gate charge: 22nC, Kind of package: reel; tape, Kind of channel: enhancement.