WMB31430DN WAYON
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/130A; 24/37.8W
Case: PDFN5060D-8
Type of transistor: N-MOSFET x2
Mounting: SMD
Kind of package: reel; tape
Gate charge: 31.1/90nC
On-state resistance: 4.5/1.3mΩ
Gate-source voltage: ±20V
Power dissipation: 24/37.8W
Drain-source voltage: 30V
Drain current: 56/130A
Polarisation: unipolar
Semiconductor structure: asymmetric
Kind of channel: enhancement
| Кількість | Ціна |
|---|---|
| 6+ | 85.64 грн |
| 10+ | 74.50 грн |
| 25+ | 66.97 грн |
| 100+ | 61.94 грн |
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Технічний опис WMB31430DN WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/130A; 24/37.8W, Case: PDFN5060D-8, Type of transistor: N-MOSFET x2, Mounting: SMD, Kind of package: reel; tape, Gate charge: 31.1/90nC, On-state resistance: 4.5/1.3mΩ, Gate-source voltage: ±20V, Power dissipation: 24/37.8W, Drain-source voltage: 30V, Drain current: 56/130A, Polarisation: unipolar, Semiconductor structure: asymmetric, Kind of channel: enhancement.