WMB340N20HG2 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 40A; Idm: 160A; 108.6W
Case: PDFN5060-8
Drain-source voltage: 200V
Drain current: 40A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 108.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 160A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 40A; Idm: 160A; 108.6W
Case: PDFN5060-8
Drain-source voltage: 200V
Drain current: 40A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 108.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 160A
Mounting: SMD
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 132.87 грн |
| 10+ | 93.49 грн |
| 27+ | 88.13 грн |
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Технічний опис WMB340N20HG2 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 40A; Idm: 160A; 108.6W, Case: PDFN5060-8, Drain-source voltage: 200V, Drain current: 40A, On-state resistance: 34mΩ, Type of transistor: N-MOSFET, Power dissipation: 108.6W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 23nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 160A, Mounting: SMD.