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WMB50N25JN WAYON

WMx50N25JN.pdf Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 16A; Idm: 90A; 89W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Case: PDFN5060-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 7.1nC
Reverse recovery time: 182ns
On-state resistance: 56mΩ
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 89W
Pulsed drain current: 90A
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Технічний опис WMB50N25JN WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 250V; 16A; Idm: 90A; 89W; PDFN5060-8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 250V, Case: PDFN5060-8, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Gate charge: 7.1nC, Reverse recovery time: 182ns, On-state resistance: 56mΩ, Drain current: 16A, Gate-source voltage: ±20V, Power dissipation: 89W, Pulsed drain current: 90A.