WMB50P03TS WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 39W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -200A
Power dissipation: 39W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 39W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -200A
Power dissipation: 39W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 488 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 34.71 грн |
| 22+ | 18.47 грн |
| 26+ | 15.17 грн |
| 74+ | 12.58 грн |
| 202+ | 11.87 грн |
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Технічний опис WMB50P03TS WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 39W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -50A, Pulsed drain current: -200A, Power dissipation: 39W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 9mΩ, Mounting: SMD, Gate charge: 45nC, Kind of package: reel; tape, Kind of channel: enhancement.