WMB60P02TS WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -60A; Idm: -240A; 41.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -240A
Power dissipation: 41.9W
Case: PDFN5060-8
Gate-source voltage: ±10V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -60A; Idm: -240A; 41.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -240A
Power dissipation: 41.9W
Case: PDFN5060-8
Gate-source voltage: ±10V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 30.47 грн |
| 23+ | 17.37 грн |
| 26+ | 15.64 грн |
| 71+ | 13.21 грн |
| 194+ | 12.50 грн |
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Технічний опис WMB60P02TS WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -60A; Idm: -240A; 41.9W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -60A, Pulsed drain current: -240A, Power dissipation: 41.9W, Case: PDFN5060-8, Gate-source voltage: ±10V, On-state resistance: 7.8mΩ, Mounting: SMD, Gate charge: 43nC, Kind of package: reel; tape, Kind of channel: enhancement.