WMB70P02TS WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -70A; Idm: -280A; 43.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -70A
Pulsed drain current: -280A
Power dissipation: 43.1W
Case: PDFN5060-8
Gate-source voltage: ±12V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -70A; Idm: -280A; 43.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -70A
Pulsed drain current: -280A
Power dissipation: 43.1W
Case: PDFN5060-8
Gate-source voltage: ±12V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 45.80 грн |
| 16+ | 25.36 грн |
| 25+ | 22.76 грн |
| 49+ | 18.98 грн |
| 134+ | 17.88 грн |
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Технічний опис WMB70P02TS WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -70A; Idm: -280A; 43.1W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -70A, Pulsed drain current: -280A, Power dissipation: 43.1W, Case: PDFN5060-8, Gate-source voltage: ±12V, On-state resistance: 5.2mΩ, Mounting: SMD, Gate charge: 55nC, Kind of package: reel; tape, Kind of channel: enhancement.