WMB80N06TS WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 95W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 95W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 95W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 95W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 90 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 61.07 грн |
| 12+ | 34.10 грн |
| 25+ | 30.81 грн |
| 36+ | 24.98 грн |
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Технічний опис WMB80N06TS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 95W; PDFN5060-8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 80A, Pulsed drain current: 320A, Power dissipation: 95W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 8.5mΩ, Mounting: SMD, Gate charge: 85nC, Kind of package: reel; tape, Kind of channel: enhancement.