WMB81N03T1 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 81A; Idm: 324A; 59W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 81A
Pulsed drain current: 324A
Power dissipation: 59W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 81A; Idm: 324A; 59W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 81A
Pulsed drain current: 324A
Power dissipation: 59W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 44.96 грн |
| 19+ | 21.58 грн |
| 25+ | 17.64 грн |
| 67+ | 13.94 грн |
| 183+ | 13.15 грн |
Відгуки про товар
Написати відгук
Технічний опис WMB81N03T1 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 81A; Idm: 324A; 59W; PDFN5060-8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 81A, Pulsed drain current: 324A, Power dissipation: 59W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 5.5mΩ, Mounting: SMD, Gate charge: 20nC, Kind of package: reel; tape, Kind of channel: enhancement.