WMB90N02TS WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 360A; 47W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 47W
Case: PDFN5060-8
Gate-source voltage: ±10V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 360A; 47W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 47W
Case: PDFN5060-8
Gate-source voltage: ±10V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 380 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 30.47 грн |
| 24+ | 16.98 грн |
| 26+ | 15.25 грн |
| 73+ | 12.89 грн |
| 198+ | 12.18 грн |
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Технічний опис WMB90N02TS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 360A; 47W; PDFN5060-8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 90A, Pulsed drain current: 360A, Power dissipation: 47W, Case: PDFN5060-8, Gate-source voltage: ±10V, On-state resistance: 3.8mΩ, Mounting: SMD, Gate charge: 42nC, Kind of package: reel; tape, Kind of channel: enhancement.