WMF05N65MM WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ MM; unipolar; 650V; 3.2A; Idm: 8.8A; 5W
Type of transistor: N-MOSFET
Technology: WMOS™ MM
Polarisation: unipolar
Drain-source voltage: 650V
Case: SOT223
On-state resistance: 1.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 5W
Gate charge: 5.3nC
Gate-source voltage: ±30V
Pulsed drain current: 8.8A
Drain current: 3.2A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ MM; unipolar; 650V; 3.2A; Idm: 8.8A; 5W
Type of transistor: N-MOSFET
Technology: WMOS™ MM
Polarisation: unipolar
Drain-source voltage: 650V
Case: SOT223
On-state resistance: 1.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 5W
Gate charge: 5.3nC
Gate-source voltage: ±30V
Pulsed drain current: 8.8A
Drain current: 3.2A
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Технічний опис WMF05N65MM WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; WMOS™ MM; unipolar; 650V; 3.2A; Idm: 8.8A; 5W, Type of transistor: N-MOSFET, Technology: WMOS™ MM, Polarisation: unipolar, Drain-source voltage: 650V, Case: SOT223, On-state resistance: 1.55Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Power dissipation: 5W, Gate charge: 5.3nC, Gate-source voltage: ±30V, Pulsed drain current: 8.8A, Drain current: 3.2A.