WMI30N60D1 WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 65 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 131.81 грн |
| 10+ | 98.86 грн |
| 13+ | 70.50 грн |
| 36+ | 66.67 грн |
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Технічний опис WMI30N60D1 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO3P, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 30A, Case: TO3P, Gate-source voltage: ±30V, On-state resistance: 0.3Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement.