WMJ020N10HGS WAYON
Виробник: WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 288A; Idm: 1152A; 347.2W
Mounting: THT
Case: TO247-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 250nC
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 347.2W
Drain-source voltage: 100V
Drain current: 288A
Pulsed drain current: 1152A
Kind of package: tube
на замовлення 160 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 191.35 грн |
| 10+ | 167.85 грн |
| 30+ | 151.91 грн |
| 90+ | 146.87 грн |
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Технічний опис WMJ020N10HGS WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 288A; Idm: 1152A; 347.2W, Mounting: THT, Case: TO247-3, Kind of channel: enhancement, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 250nC, On-state resistance: 2mΩ, Gate-source voltage: ±20V, Power dissipation: 347.2W, Drain-source voltage: 100V, Drain current: 288A, Pulsed drain current: 1152A, Kind of package: tube.