WMJ020N10HGS WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 288A; Idm: 1152A; 347.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 288A
Pulsed drain current: 1152A
Power dissipation: 347.2W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 288A; Idm: 1152A; 347.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 288A
Pulsed drain current: 1152A
Power dissipation: 347.2W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
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Технічний опис WMJ020N10HGS WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 288A; Idm: 1152A; 347.2W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 288A, Pulsed drain current: 1152A, Power dissipation: 347.2W, Case: TO247-3, Gate-source voltage: ±20V, On-state resistance: 2mΩ, Mounting: THT, Gate charge: 250nC, Kind of package: tube, Kind of channel: enhancement.