WMJ023N08HGS WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 280A; Idm: 1120A; 320.5W
Drain-source voltage: 80V
Drain current: 280A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 320.5W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.14µC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1120A
Mounting: THT
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 280A; Idm: 1120A; 320.5W
Drain-source voltage: 80V
Drain current: 280A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 320.5W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.14µC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1120A
Mounting: THT
Case: TO247-3
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 137.56 грн |
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Технічний опис WMJ023N08HGS WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 80V; 280A; Idm: 1120A; 320.5W, Drain-source voltage: 80V, Drain current: 280A, On-state resistance: 2.4mΩ, Type of transistor: N-MOSFET, Power dissipation: 320.5W, Polarisation: unipolar, Kind of package: tube, Gate charge: 0.14µC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 1120A, Mounting: THT, Case: TO247-3.