WMJ023N08HGS WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 280A; Idm: 1120A; 320.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 280A
Pulsed drain current: 1120A
Power dissipation: 320.5W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 280A; Idm: 1120A; 320.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 280A
Pulsed drain current: 1120A
Power dissipation: 320.5W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 422.24 грн |
Відгуки про товар
Написати відгук
Технічний опис WMJ023N08HGS WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 80V; 280A; Idm: 1120A; 320.5W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 80V, Drain current: 280A, Pulsed drain current: 1120A, Power dissipation: 320.5W, Case: TO247-3, Gate-source voltage: ±20V, On-state resistance: 2.4mΩ, Mounting: THT, Gate charge: 0.14µC, Kind of package: tube, Kind of channel: enhancement.