WMJ028N10HGS WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 228A; Idm: 912A; 320.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 228A
Pulsed drain current: 912A
Power dissipation: 320.5W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 228A; Idm: 912A; 320.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 228A
Pulsed drain current: 912A
Power dissipation: 320.5W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
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Технічний опис WMJ028N10HGS WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 228A; Idm: 912A; 320.5W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 228A, Pulsed drain current: 912A, Power dissipation: 320.5W, Case: TO247-3, Gate-source voltage: ±20V, On-state resistance: 3mΩ, Mounting: THT, Gate charge: 145nC, Kind of package: tube, Kind of channel: enhancement.