Результат пошуку "wmj028n10hgs" : 1
Вид перегляду :
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
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WMJ028N10HGS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 228A; Idm: 912A; 320.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 228A Pulsed drain current: 912A Power dissipation: 320.5W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| WMJ028N10HGS |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 228A; Idm: 912A; 320.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 228A
Pulsed drain current: 912A
Power dissipation: 320.5W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 228A; Idm: 912A; 320.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 228A
Pulsed drain current: 912A
Power dissipation: 320.5W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.