WMJ12N120D1 WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 12A; Idm: 48A; 278W
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed drain current: 48A
Power dissipation: 278W
Gate charge: 94nC
Polarisation: unipolar
Technology: WMOS™ D1
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 293.80 грн |
| 3+ | 217.91 грн |
| 10+ | 163.01 грн |
| 30+ | 147.81 грн |
| 120+ | 136.83 грн |
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Технічний опис WMJ12N120D1 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 12A; Idm: 48A; 278W, Case: TO247-3, Mounting: THT, Kind of package: tube, Pulsed drain current: 48A, Power dissipation: 278W, Gate charge: 94nC, Polarisation: unipolar, Technology: WMOS™ D1, Drain current: 12A, Kind of channel: enhancement, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Gate-source voltage: ±30V, On-state resistance: 1.25Ω.