WMJ220N20HG3 WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 82A; Idm: 328A; 329W; TO247-3
Case: TO247-3
Mounting: THT
Drain-source voltage: 200V
Drain current: 82A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 329W
Polarisation: unipolar
Kind of package: tube
Gate charge: 36nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 328A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 82A; Idm: 328A; 329W; TO247-3
Case: TO247-3
Mounting: THT
Drain-source voltage: 200V
Drain current: 82A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 329W
Polarisation: unipolar
Kind of package: tube
Gate charge: 36nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 328A
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Технічний опис WMJ220N20HG3 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 82A; Idm: 328A; 329W; TO247-3, Case: TO247-3, Mounting: THT, Drain-source voltage: 200V, Drain current: 82A, On-state resistance: 21mΩ, Type of transistor: N-MOSFET, Power dissipation: 329W, Polarisation: unipolar, Kind of package: tube, Gate charge: 36nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 328A.