WMJ3N120D1 WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 3A; Idm: 12A
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed drain current: 12A
Power dissipation: 156.2W
Gate charge: 22.2nC
Polarisation: unipolar
Technology: WMOS™ D1
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 109.15 грн |
| 6+ | 80.24 грн |
| 10+ | 60.81 грн |
| 30+ | 54.06 грн |
| 120+ | 50.68 грн |
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Технічний опис WMJ3N120D1 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 3A; Idm: 12A, Case: TO247-3, Mounting: THT, Kind of package: tube, Pulsed drain current: 12A, Power dissipation: 156.2W, Gate charge: 22.2nC, Polarisation: unipolar, Technology: WMOS™ D1, Drain current: 3A, Kind of channel: enhancement, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Gate-source voltage: ±30V, On-state resistance: 6.3Ω.