WMJ3N150D1 WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 40nC
Drain current: 3A
On-state resistance: 5.7Ω
Pulsed drain current: 12A
Gate-source voltage: ±30V
Power dissipation: 125W
Drain-source voltage: 1.5kV
| Кількість | Ціна |
|---|---|
| 3+ | 164.97 грн |
| 4+ | 122.21 грн |
| 10+ | 92.08 грн |
| 30+ | 82.03 грн |
| 120+ | 77.01 грн |
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Технічний опис WMJ3N150D1 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W, Mounting: THT, Kind of channel: enhancement, Type of transistor: N-MOSFET, Technology: WMOS™ D1, Case: TO247-3, Kind of package: tube, Polarisation: unipolar, Gate charge: 40nC, Drain current: 3A, On-state resistance: 5.7Ω, Pulsed drain current: 12A, Gate-source voltage: ±30V, Power dissipation: 125W, Drain-source voltage: 1.5kV.