WMJ4N150D1 WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 125W
Mounting: THT
Drain current: 4A
On-state resistance: 5.4Ω
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Gate charge: 41nC
Technology: WMOS™ D1
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 16A
Case: TO247-3
Drain-source voltage: 1.5kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 125W
Mounting: THT
Drain current: 4A
On-state resistance: 5.4Ω
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Gate charge: 41nC
Technology: WMOS™ D1
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 16A
Case: TO247-3
Drain-source voltage: 1.5kV
на замовлення 268 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 169.99 грн |
| 4+ | 125.96 грн |
| 10+ | 94.87 грн |
| 13+ | 73.34 грн |
| 35+ | 69.36 грн |
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Технічний опис WMJ4N150D1 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 125W, Mounting: THT, Drain current: 4A, On-state resistance: 5.4Ω, Type of transistor: N-MOSFET, Power dissipation: 125W, Polarisation: unipolar, Kind of package: tube, Gate charge: 41nC, Technology: WMOS™ D1, Kind of channel: enhancement, Gate-source voltage: ±30V, Pulsed drain current: 16A, Case: TO247-3, Drain-source voltage: 1.5kV.